Engineering B.E. (Electronics & Computer Science Engineering) Sem 7 May 2019 2019 IC Technology Question Paper - Mumbai University | munotes
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Questions asked in this paper
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Q2 Solve any three questions from the remaining questions
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Q3 Assume suitable data if necessary
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Q1 Answer any four:
- (a) Describe bonded SOI and smart cut SOI method 5
- (b) Enlist the steps for obtaining Si from sand. 5
- (c) What is short channel effect? How to avoid it? 5
- (d)Explain any one application of nanowire 5
- (e) Explain difference between positive and negative photo resist 5
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Q2 (a) Explain Liquid phase epitaxy method. What are its advantage and disadvantage? 10 marks
- (b) Explain RCA cleaning method. 5
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Q3 (a)Enlist step for fabrication of CMOS inverter using N well process. Draw vertical cross sectional view starting from substrate till the gate, source and drain formation in fabrication of 10 marks
- (b) Draw layout of 2 input CMOS NAND gate using lambda based design rule 10 4 (a)Describe with help of neat diagram of Hyness schokley experiment for measurement of 10 drift mobility of n type semiconductor
- (b) Explain Deal and Groove model for oxidation 5
- (c) Explain BiCMOS 5 5 (a)What is LOCOS? Why it is required in CMOS process. Explain technology solution for 10 avoiding problem in LOCOS
- (b) Explain Difference between schottky contact and ohmic contact 5 Explain Difference between Dry etching and Wet etching 5 6 Write short notes 20
- (a) MODFET devices
- (c) High k and low k dielectric
- (d) Need of lambda based design rule
- (e) X ray lithography
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