MSc Physics (Electronics I) SEM I 2023 2024 Feb 2024 SOLID STATE DEVICES Question Paper - Mumbai University | munotes

Questions asked in this paper

• (2) Figures to the right indicate full marks

1. Q1 (a) Attempt any one:
   • (i) Classify different types of semiconductors. 7
   • (ii) Describe the Haynes Shockley experiment to demonstrate the drift & 7 diffusion of the minority charge carriers
   • (b) Attempt any one:
   • (i) a short note on four probe resistivity measurement. 3
   • (ii) With neat band diagram explain direct semiconductors. 3
2. Q2 (a) Attempt any one: Fora linearly graded p-n junction, show that the built in potential 7
   • (ii) | Draw and explain the energy band diagram of p-n junction solar cell. Derive 7 the expression for maximum output power of solar cell
   • (b) Attempt any one:
   • (i) the operation of a p-i-n diode in short. 3
   • (ii) Write a short note on depletion-capacitance. 3
3. Q3 (a) Attempt any one:
   • (i) the energy band diagram of a metal — n type semiconductor contact 7 thermal equilibrium. Hence find the value of the built in potential Vbi Explain, how does the energy band diagram gets modified under forward and
   • (ii) Discuss the switching action of a pnp transistor. Explain how the switching 7 action of the transistor can be improved? Paper Subject Code: N59755 Solid State Devices
   • (b) Attempt any one:
   • (i) short note on quantum well structures. 3
   • (ii) Sketch the minority carrier distribution and state various terms in it for pnp 3 transistor under active mode of operation
4. Q4 (a) Attempt any one: the MODFET fundamentals. Discuss the energy band diagrams for 7
   • (ii) With the help of sketches of variation of depletion layer width and output 7 characteristics under different biasing conditions, explain the principle of operation of MESFET
   • (b) Attempt any one: the MOSFET operation using its I-V characteristics. 3
   • (ii) | Write note on ideal MOS diode. 3
5. Q5 Attempt any five:
   • (a) Explain the term surface recombination. 2
   • (b) Give any two applications of Hall effect. 2
   • (c) What is ideality factor? 2
   • (d) Draw and explain the current-voltage characteristics of a tunnel diode. 2
   • (e) Draw the low and high frequency equivalent circuit diagram for pnp 2 transistor connected in CE configuration
   • (f) State the expression of current density in Schottky contact and explain 2 various terms in it
   • (g) For an n- channel GaAs MESFET at T= 300K with gold contact, barrier 2 height is 0.89V. The n- channel doping is 2 x and the channel thickness is Calculate the pinch-off voltage and the built-in potential The dielectric constant of GaAs is 12.4
   • (h) Write note on fabrication of integrated circuit inductor. 2

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