Engineering FE Engineering Common Sem 1 2018 December 2018 Applied Physics I Question Paper - Mumbai University | munotes
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Questions asked in this paper
- 4) Figures to the right indicate full marks
-
Q1 Attempt any Five questions from the following. 15 marks
- (a) Draw (123), (321), (102)
- (b) Explain with diagram HCP unit cell based on lattice parameters
- (c) State properties of matter waves
- (d) Calculate electron & hole concentration in intrinsic Si-at room temperature if its electrical conductivity is 4x10* mho/m. Given that mobility of electron = and mobility of
- (e) Explain Meissner Effect with the help of diagram
- (f) A conference room has a total volume of The magnitude of total absorption within the conference room is 100 sabin. Calculate the reverberation time
- (g) Discuss any three applications of Ultrasonic waves
-
Q2 (a) State Heisenberg’s Uncertainty Principle. Show that electron doesn’t exist in the nucleus Find the accuracy in the position of an electron moving with speed 350 m/sec with uncertainty
- (b) Show that for intrinsic semiconductors the Fermi midway between the conduction band and the valence band. With the help of diagram explain effect of impurity concentration on Fermi level of N type semiconductor. (7)
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Q3 (a) Derive Bragg’s condition for X-ray diffraction. rays are incident on a crystal. If first order reflection is observed angle at what angle would second order
- (b) expression for Hall voltage and Hall coefficient with neat labelled diagram. 7
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Q4 (a) Differentiate between Type-I & Type-II Superconductors. 5 marks
- (b) Discuss in details any three factors affecting acoustics of a hall with their remedies. 5
- (c) A quartz crystal of thickness 1mm is vibrating at resonance. Calculate its fundamental frequency. (Assume that for quartz, and p (5)
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Q5 Define Ligancy. Find the value of critical radius ration for Ligancy 3. 5 marks
- (b) For an electron passing through potential difference ‘V’, show that its wavelength is;
- (c) What is the probability of an electron being thermally excited to conduction band in Si at The band gap energy is 1.12 eV. (5)
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Q6 Explain Point defects in crystals. 5 marks
- (b) Show that group velocity of matter waves associated with a particle is equal to the particle
- (c) Explain the principle, construction and working of Light Emitting Diode. 5
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